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Information × Registration Number 2114U001731, Article popup.category Thesis Title popup.author popup.publication 01-01-2014 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/38343 popup.publisher Видавництво Львівського національного університуту імені Івана Франка Description ZnO1-хSx alloys have attracted a special interest of researchers due to the possibility of controlled change of the band gap in a wide range from 3.37 eV (ZnO) to 3.68 eV (ZnS). This allows creating of effective UV photodetectors, electroluminescent devices, and others. The use of ZnO1-хSx buffer layers instead of ZnO can increase the conversion efficiency of thin-film solar cells based on CdTe, Cu(In, Ga)Se2 and Cu2ZnSnS4. popup.nrat_date 2025-05-12 Close