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Information × Registration Number 2115U000698, Article popup.category Стаття Title popup.author popup.publication 01-01-2015 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/43189 popup.publisher Sumy State University Description It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1.52 nW/cm2. popup.nrat_date 2025-03-24 Close