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Information × Registration Number 2116U000556, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/49797 popup.publisher Sumy State University Description In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD. popup.nrat_date 2025-03-24 Close