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Information × Registration Number 2116U000720, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/49682 popup.publisher Sumy State University Description We investigated the structural and optoelectronic properties of p-n germanium nanocrystals based junctions embedded between GaAs substrate and layers of ZnO:Al or a-Si:H. Scanning electron microscopy and scanning tunneling microscopy were used on these junctions in this work. Calculations of tunneling current on the substrate showed effect of localized defects trapping Fermi level at the surface tending to make a semi-insulating substrate. The average value of the diameter of the Ge nanoparticle is around 12.5 nm. These results lay the foundation for the development of solar cells which active part is made of GeNCs. popup.nrat_date 2025-03-24 Close