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Information × Registration Number 2116U000797, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/47493 popup.publisher Sumy State University Description Influence of the composition variation along the quasi-binary line GeTe-Sb[2]Te[3] on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb[2]Te[3] from GeSb[4]Te[7] to GeSb[2]Te[4], and then to Ge[2]Sb[2]Te[5], while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport. popup.nrat_date 2025-03-24 Close