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Інформація × Реєстраційний номер 2116U000797, Матеріали видань та локальних репозитаріїв Категорія Стаття Назва роботи Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application Автор Дата публікації 01-01-2016 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/47493 Видання Sumy State University Опис Influence of the composition variation along the quasi-binary line GeTe-Sb[2]Te[3] on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb[2]Te[3] from GeSb[4]Te[7] to GeSb[2]Te[4], and then to Ge[2]Sb[2]Te[5], while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport. Додано в НРАТ 2025-03-24 Закрити