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Information × Registration Number 2116U000924, Article popup.category Стаття Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/45503 popup.publisher Sumy State University Description Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio. popup.nrat_date 2025-03-24 Close