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Information × Registration Number 2116U002696, Article popup.category Thesis Title popup.author popup.publication 01-01-2016 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/46858 popup.publisher Sumy State University Description To form the sensing elements of the magnetic field sensors based on magneto-resistance effect, it was suggested to use a method of layer condensation in vacuum Co and Cu with the thickness of individual layers from 1 to 20 nm and sequence depending on the functionality of the finished sensitive element. For high-speed digital sensors, it is reasonable to form multilayer nanostructures of a spin-valve “sandwich” type Co(4÷12nm)/Cu(4÷8 nm)/Co(20 nm)/S (S - substrate). Co magneto-rough lower layer is additionally secured by high temperature of substrate TS = 950 K which provides high values of lower layer coercitivity Co. The sensor element based on such a multilayer structure depending on the applied external magnetic field can be located in two states “high” and “low” value of resistance that can provide a stable state of logic “zero” and “unity.” popup.nrat_date 2025-05-12 Close