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Інформація × Реєстраційний номер 2116U002696, Матеріали видань та локальних репозитаріїв Категорія Thesis Назва роботи Formation of the sensing element of the magnetic field sensor based on Cu and Cu Автор Дата публікації 01-01-2016 Постачальник інформації Сумський державний університет Першоджерело http://essuir.sumdu.edu.ua/handle/123456789/46858 Видання Sumy State University Опис To form the sensing elements of the magnetic field sensors based on magneto-resistance effect, it was suggested to use a method of layer condensation in vacuum Co and Cu with the thickness of individual layers from 1 to 20 nm and sequence depending on the functionality of the finished sensitive element. For high-speed digital sensors, it is reasonable to form multilayer nanostructures of a spin-valve “sandwich” type Co(4÷12nm)/Cu(4÷8 nm)/Co(20 nm)/S (S - substrate). Co magneto-rough lower layer is additionally secured by high temperature of substrate TS = 950 K which provides high values of lower layer coercitivity Co. The sensor element based on such a multilayer structure depending on the applied external magnetic field can be located in two states “high” and “low” value of resistance that can provide a stable state of logic “zero” and “unity.” Додано в НРАТ 2025-05-12 Закрити