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Information × Registration Number 2118U001557, Article popup.category Стаття Title popup.author popup.publication 01-01-2018 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/71478 popup.publisher Sumy State University Description Among the factors limiting the open circuit voltage of Heterojunctions with Intrinsic Thin layers solar cell, the surface potential barrier at the Indium Tin Oxide (ITO)/hydrogenated amorphous silicon (a-Si:H) interface is one of the most important. To reduce this surface potential barrier, we have varied the band bending by simulation. The aim is to understand why, in spite of a considerable change in the front contact barrier height at the interface ITO/n-а-Si:H (band banding reduced), the characteristics J(V) remain almost unchanged. popup.nrat_date 2025-03-24 Close