Search academic texts

Information × Registration Number 2118U002013, Article popup.category Стаття Title popup.author popup.publication 01-01-2018 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/70907 popup.publisher Sumy State University Description In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of device operation. popup.nrat_date 2025-03-24 Close