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Head: Bortchagovsky Eugene. Investigation of interaction and Rabi splitting of surface and localized plasmons by ellipsometry. (popup.stage: ). Institute of Semiconductor Physics. № 0217U004114

Head: Kladko Vasyl Petrovych. Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. № 0216U001911

Head: Bortchagovsky Eugene. Investigation of interaction and Rabi splitting of surface and localized plasmons by ellipsometry. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0216U003627

Head: Omelchuk Anatolii Afanasievich. Electrochemical and chemical syntheses of nanoscale materials based on elements of groups III and IV.. (popup.stage: ). V.I.Vernadskii Institute of General and Inorganic Chemistry NASU. № 0210U003650

Чернышов Владимир Иосифович. : к.т.н. : spec.. 05.13.06 - Інформаційні технології : presented. 1994-06-08; popup.evolution: .; . – , 0494U000835.

Важенин Олег Николаевич. : к.т.н. : spec.. 05.13.16 - : presented. 1993-06-24; popup.evolution: .; . – , 0493U003153.