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Head: Yukhymchuk Volodymyr O.. Deformation engineering of the electronic structure of GeSn thin films for new generation IR optoelectronics. (popup.stage: Розробка методики формування GeSn плівок на Si та Ge підкладки методом іонної імплантації). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U004320

Head: Valakh Mykhailo Ya.. Nanocrystals of multicomponent chalcogenides of Cu2ZnSnS4 type with cationic substitution and surface modification for thin-film photovoltaics.. (popup.stage: Дослідження нанокристалів багатокомпонентних халькогенідів типу Cu2ZnSnS4 iз катіонним заміщенням і модифікацією поверхні для тонкоплівкової фотовольтаїки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U002665

Head: Valakh Mykhailo Ya.. Development of the element base technology of modern infrared photoelectronics. (popup.stage: Розробка технології елементної бази сучасної інфрачервоної фото електроніки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U000735

Head: Yukhymchuk Volodymyr O.. Deformation engineering of the electronic structure of GeSn thin films for new generation IR optoelectronics. (popup.stage: Розробка методики магнетронного осадження GeSn плівок на Si та Ge підкладки при варіюванні в них вмісту Sn). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U032996

Head: Yukhymchuk Volodymyr O.. Deformation engineering of the electronic structure of GeSn thin films for new generation IR optoelectronics. V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0124U003756

Head: Melnyk Viktor P.. Creation of basic technologies for the formation of semiconductor materials and structures for Nano - and optoelectronics. (popup.stage: Створення базових технологій формування напівпровідникових матеріалів і структур для нано- та оптоелектроніки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U002739

Head: Dzhahan Volodymyr M.. New mechanisms of interaction of plasmonic nanoparticles with potential-dependent ion channels of cells. (popup.stage: ). V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine. № 0223U005885

Head: Yukhymchuk Volodymyr O.. Development of new dielectric UHF materials for resonators, which will increase the sensitivity of EPR devices, and the creation on their basis mini-EPR analyzer for rapid analysis in medicine and monitoring of the environment. Section 2. Development of a mini-EPR analyzer for express analysis in medicine and environmental monitoring on the basis of UHF resonators with optimized geometry. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0223U000503

Head: Yukhymchuk Volodymyr O.. Development of new dielectric UHF materials for resonators, which will increase the sensitivity of EPR devices, and the creation on their basis mini-EPR analyzer for rapid analysis in medicine and monitoring of the environment. Section 2. Development of a mini-EPR analyzer for express analysis in medicine and environmental monitoring on the basis of UHF resonators with optimized geometry. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U003759

Head: Yukhymchuk Volodymyr O. Investigation of the features of cationic substitution in nanocrystals of quaternary metal chalcogenides - materials of the new generation of thin-film photovoltaics. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0222U001063