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Information × Registration Number 0125U001768, R & D request Title Development of principles of formation of properties of ultra-wide bandgap semiconductors based on Ga2O3 for power electronics and UV optoelectronics Head Vasylechko Leonid O., Доктор хімічних наук Registration Date 20-03-2025 Organization Lviv Polytechnic National University popup.description1 Searching for and establishing the possibilities of controlled modification of the crystal structure, optical and electronic properties of wide-bandgap oxide semiconductors by single- and multi-cationic substitution of different crystallographic positions in the structure of b-Ga2O3 and lithium-gallium spinel based on the synthesis of new compounds and a comprehensive experimental and theoretical study of the relationship between their atomic structure and band structure. popup.nrat_date 2025-03-20 Close