1 documents found
Information × Registration Number 0203U002063, 0101U000345 , R & D reports Title Research of the influence of defects and their complexes on the physical and mechanical characteristics of the real semi-conductor materials. popup.stage_title Head Fedosov Anatoliy Vasilyovich, Registration Date 24-01-2003 Organization Lutsk State Technical University popup.description2 On the results of piezoresistance measuring it is estimated the value of interior deformation fields in Silicon crystals under their doping with isovalent impurity/ A new method of elasticity modules evaluating for n-Ge and n-Si on the basis of piezoresistance measuring is proposed. It is investigated the anisotropy of radiation defects and their influence on the kinetic effects in Ge and Si/ Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Research of the influence of defects and their complexes on the physical and mechanical characteristics of the real semi-conductor materials.
Head: Fedosov Anatoliy Vasilyovich. Research of the influence of defects and their complexes on the physical and mechanical characteristics of the real semi-conductor materials.. (popup.stage: ). Lutsk State Technical University. № 0203U002063
1 documents found

Updated: 2026-03-22


Роздрукувати цю сторінку