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Information × Registration Number 0208U004851, 0108U010726 , R & D reports Title Nanocomposite thin films in metallization of semiconductor devices based on gallium nitride and silicon carbide for high - power electronics popup.stage_title Head Kuchuk Andrian Volodymyrovych, Registration Date 23-12-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 In the framework of the project the stable systems of contact metallization, based on ternary Ta(Ti)-Si-N diffusion barriers, to SiC and GaN were developed. The system of multilevel metallization contain the Au over-layer, diffusion barrier Ta(Ti)-Si-N (< 100 nm) and contact films of Au-, Pd- to GaN, and Ni-, Si- to SiC. Product Description popup.authors popup.nrat_date 2020-04-03 Close