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Information × Registration Number 0209U002165, 0106U009603 , R & D reports Title "Development of technology and modernization of technological base from making super-power Silicon microwave IMPATT diodes of 8-millimetric range of the impulsive mode of work" popup.stage_title Head Boltovetc Mykolay Silovich, Registration Date 21-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 The design-engineering decisions are developed for the production of pulse super-power Si IMPATT-diodes of 8-millimetric wavelength, intended for a generation and amplifying with 15-20 W power in the frequency range of 33-35 GHz at a pulse width of 100-400 ns. Mathematical simulation and construction optimization of pulse IMPATT-diodes, design and rout-technological documentations are developed on impulsive LPD using advanced computer technique. The construction of diode is made as a reverse Si mesa of р+-р-n-n+-типа, mounted in a metal rubin packages with the hard gilded conclusions. The experimental models of pulse Si IMPATT-diodes of 8-millimetric wavelength are made and research of their parameters is conducted. Product Description popup.authors popup.nrat_date 2020-04-02 Close