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Information × Registration Number 0216U000014, 0115U001538 , R & D reports Title Development of special purpose infrared photodetectors manufacturing technology popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 14-01-2016 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 Atestation of structural, electrical and photoelectrical parameters and characteristics of origin materials were performed. Composition of polishing etching mixture for removing of sub-micron layers in InSb substrate is optimized. Subsrate InSb with stechiometry and mirror-smooth planar surface was obtained. Methodic of substrate surface passivation by forming of selfoxidation and lowtemperature deposition of protective layer SiOx. Technology of defect-free planar and stechiometric surface of InSb substrate were developed. Also created technology of manufacturing of passivation and protective layers for InSb substrate. Modeling of transport and photovoltaic phenomena of InSb p-n-junction for structure optimization of sensitive area. Product Description popup.authors А.А.Сукач Б.М.Романюк В.В.Тетьоркін В.Г. Попов В.М.Телега В.П. Мельник Д.В.Корбутяк Н.В. Сафрюк О.Й. Гудименко О.С.Оберемок С.В.Сапон popup.nrat_date 2020-04-02 Close