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Information × Registration Number 0219U101308, 0119U100449 , R & D reports Title Three-layered heterostructures on the base of nanocrystalline silicon popup.stage_title Head Koval Viktoriia M., Кандидат технічних наук Registration Date 05-07-2019 Organization National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute" popup.description2  The object of the study is a three-layered heterostructure based on nanocrystalline silicon. Subject of work - study of structural, electrical, photosensitive and photoelectric properties of single-layered and multilayered structures on the basis of nanocrystalline silicon. The purpose of the work is to establish optimal technological modes of synthesis of three-layered heterostructures based on nanocrystalline silicon in terms of obtaining maximum photosensitivity and photovoltaic properties. The first section gives an overview of literature on methods for obtaining nanocrystalline silicon and analysis of the characteristics of Si-single-layered structures. The second section gives an overview of literature on methods for obtaining and analyzing the basic characteristics of Si-multilayered structures. The third section describes the experimental equipment and methods for obtaining experimental samples, as well as investigations of the structural properties and the chemical composition of the silicon layered material, measurement of the electrical, photovoltaic and photosensitive properties of the test specimens. Product Description popup.authors Koval Viktoriia M. popup.nrat_date 2020-04-02 Close