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Information × Registration Number 0219U102312, 0119U102104 , R & D reports Title The influence of solvent metals on the optical and structural properties of GaN monocrystals growth by crystallization from a solution in transition metals (Fe, Co, Cr) under high temperature and high-pressure conditions popup.stage_title Head Strelchuk Viktor V., Доктор фізико-математичних наук Registration Date 26-12-2019 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 The analysis and generalization of the results of studies of the influence of solvent metals on the optical and structural properties, and the impurity composition of GaN single crystals synthesized from FeGaN solution under high temperature and high pressure are carried out. It was shown that new GaN crystals have a high crystalline quality of wurtzite structure. The spectra of their edge photoluminescence are dominated by exciton bands bound to typical unintended donor impurities in GaN - silicon and oxygen, while the yellow and blue bands in the defect photoluminescence spectra are due to gallium vacancies VGa and MgGa impurities, respectively. Intracenter emission of Fe3+ is detected in the infrared photoluminescence spectra. The difference in the shape of the Raman spectra, the spectra of the edge, defective, and intracenter photoluminescence for different GaN crystals, as well as within each GaN crystal, indicates a spatially inhomogeneous distribution of the crystal quality and impurity composition of the synthesized GaN crystals. Product Description popup.authors Boiko Vitalii A. Nikolaenko Andrii S. popup.nrat_date 2020-04-02 Close