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Information × Registration Number 0220U100878, 0118U003046 , R & D reports Title Investigation of delta-doped nanostructures in order of creation of re-tuned by electric field the active and passive devices in the THz range popup.stage_title Head Tulupenko Viktor M., Registration Date 29-01-2020 Organization Donbass State Engineering Academy popup.description2 Object of study: Strained silicon (Si) delta-doped quantum wells with silicon-germanium Si0.8Ge0.2 barriers. Aim of the study: to determine the effect of background and, therefore, deliberate, doping of barriers on the restructuring of, first of all, the first energy levels of spatial quantization in delta doped quantum wells. Theoretical results: it is shown that it is possible to obtain an increased (up to two times) concentration of electrons in quantum wells due to the ionization of background impurities. Since electrons first occupy the first levels of spatial quantization, this results in an increase in the intersubband absorption coefficient of such a structure. Given that ionization of the delta layer leads to a significant restructuring of the structure of the first levels of spatial quantization, the increase in intersubband absorption is of great importance for the construction of the tuned infrared photodetector, including the terahertz spectrum, which is extremely important and may find application in different, including defence spheres of national economy. Novelty: Based on the original idea of the authors about the effect of ionization of the delta layer on the ionization energy of impurities of the same delta layer and on the restructuring of the first energy levels of spatial quantization. A testament to the novelty of the developments is the large number of publications by authors in the leading English-language scientific journals in the world. Product Description popup.authors popup.nrat_date 2020-04-02 Close