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Information × Registration Number 0221U102961, 0116U003696 , R & D reports Title Development and diagnostics of semiconductor structures of IR and terahertz photoelectronics. popup.stage_title Head Syzov Fedir F., Доктор фізико-математичних наук Registration Date 12-02-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  Аbstract Number of pages - 200, figures - 135, tables - 21, number of links - 182. Technological approaches to the application of ion-plasma modification of the surface of the CdZnTe semiconductor and passivation of its surface, in particular diamond-like carbon films, to create X-ray and gamma detectors, which are characterized by low leakage currents, stable functional characteristics and operate at room temperature The properties of composites based on Fe2O3 have been studied, and the phase composition, architecture, and kinetics of charge carriers in nanoheterostructures based on Fe and Cr oxides have been studied. A measuring system for testing the electrical parameters of devices with charge communication with electronic multiplication of various formats has been designed and manufactured. The developed equipment allows to measure photoelectric parameters of multi-element photodetectors. Techniques are developed and the results of measurements of dark currents, sensitivity of the output amplifier, charge transfer efficiency, charge capacity and other parameters are presented. The studies were performed on samples of the format 576 × 288, 640 × 512, 768 × 576, 1024 × 1024, 1280 × 1024 both on plates and in housings. The topology and technological modes of manufacturing discrete photodiodes ( = 0.5 - 1.5 mm) for the middle IR range of the spectrum based on cadmium-mercury-tellurium epitaxial layers (CМT) have been developed. The optical, photoelectric and volt-ampere characteristics of discrete CМT photodiodes for the spectral range of 3 ÷ 5 μm have been studied in order to achieve the required operating parameters. It is established that the obtained photodiodes can operate in modes limited by fluctuations of background radiation (BLIP-mode). The photoelectric properties of oxidized structures of macroporous silicon with ZnO, CdS nanoparticles were studied to estimate the change of the surface barrier at the “macroporous silicon-nanocoating” boundary, d Product Description popup.authors Karachevtseva Ludmila A Reva Volodymyr P Tsybrii Zinoviya F popup.nrat_date 2021-02-12 Close