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Information × Registration Number 0222U001121, 0121U111874 , R & D reports Title Plasmon nanostructures "semiconductor-metal-dielectric" for highly sensitive sensors of harmful fumes of organic substances of industrial origin popup.stage_title Head Dorozhynskyi Hlib V., Кандидат технічних наук Registration Date 24-01-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  An information-patent search and analysis of the design and manufacturing technology of nanostructures of existing gas sensors containing oxides of tin and indium or layers of polytetrafluoroethylene were performed. According to the search results, it was found that the chosen field of research is relevant and promising. Numerical simulation of refractometric characteristics of PPR of nanostructures "ITO-Au-PTFE" in the range of excitation wavelengths of surface plasmons from 500 to 1600 nm was performed. According to the simulation results, it was found that increasing the thickness of the ITO has little effect on the shift of the angular position of the resonance (0.4 angular sec / nm), but increasing the thickness of PTFE film significantly shifts the resonance (0.33 deg / nm). The optimal thicknesses for ITO (66 nm) and PTFE (from 10 nm to 40 nm) were determined, which meet the metrological characteristics of the device "Plasmon-6", which was used in the study. Taking into account the simulation results, ITO-Au-PTFE nanostructures with different PTFE thicknesses were fabricated and their morphologies and optical constants were determined. Using the methods of atomic force microscopy and refractometry PPR, it was found that the use of the ITO sublayer led to a 1.5-fold increase in the RMS roughness of the PTFE surface and a decrease of an average of 20% of the gold film extinction coefficient. The nature of the influence of operating temperatures on the optical constants of the plasmon-bearing gold layer of the ITO-Au-PTFE nanostructure was experimentally established, in particular, a linear increase in refractive index and decrease in extinction coefficient with increasing temperature. The efficiency of the ITO sublayer as a film heater in the PPR sensor of the Plasmon-6 device was confirmed, in particular, a 1.5-fold reduction in electric power consumption from 3.4 W to 2.3 W compared to the existing resistive heater was experimentally shown. Product Description popup.authors Dorozhynska Hanna Fedorenko Artem V popup.nrat_date 2022-03-09 Close