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Information × Registration Number 0223U001618, 0121U109519 , R & D reports Title Physical and technological principles of obtaining Cu2 (Zn; Al, Ag) (Sn; In; Ga) S4 films and silicon carbide on porous silicon substrates popup.stage_title Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 01-02-2023 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description2  Object of research - physicochemical processes occurring as a result of the formation of SiC film on substrates of porous silicon and compounds A2B6, A3B5, Ga2O3 on the template SiC/PS/Si, electrophysical and structural properties of Cu2(Zn;Al,Ag)(Sn;In;Ga)S4 and electrophysical properties of Cu2(Zn;Al,Ag) heterostructures (Sn;In;Ga)S4/PS/Si and Cu2(Zn;Al,Ag)(Sn;In;Ga)S4/Mo/PS/Si. The aim is to create the scientific basis for the controlled synthesis of epitaxial films and nanostructures of wide-band semiconductors on SiC nanofilms obtained on porous silicon, as well as the synthesis of quaternary compounds Cu2(Zn;Al,Ag)(Sn;In;Ga)S4, research of the physical processes taking place in these materials with various methods of their synthesis, analysis of the influence of impurities, synthesis modes and subsequent technological treatments on the structure, phase transitions and related structural distortions in the material, as well as the creation of new generation device structures. Results: the formation of the Ga2O3/PS/Si heterostructure was investigated. Ga2O3 films were obtained by RF magnetron sputtering on PS. The Ga2O3 film was investigated by SEM, X-ray diffractometry and EDAX methods. Research allows us to assert the formation of the SiO2 boundary between Ga2O3 and Si. The results of admittance spectroscopy indicate the existence of at least two charge transfer processes: inside the crystallite volume and along the crystallite boundaries. The activation energy is equal to 0.58eV and 0.78eV, respectively. The production of finely dispersed Cu2ZnSnS4 by the method of self-propagating high-temperature synthesis (HSS) was investigated. The ZnS:Mn,Mg powder was obtained by the HSS method, with the simultaneous introduction of Mn and Mg impurities. It was found that the simultaneous introduction of impurities leads to an uneven distribution of manganese, which forms areas with a lower and higher concentration of M, manganese ions form paramagnetic clusters. Product Description popup.authors Dyomina Natalya Anatoliivna Diadenchuk Alona F. Zhuk Anton Gennadievich Onyschenko Galyna popup.nrat_date 2023-02-01 Close