Registration Number
0224U001264,
0121U100620
, R & D reports
Title
Regularities of anisotropy of electrophysical and luminescent properties of HPHT diamond single crystals with a mass of 5-15 ct
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Head
Lysakovskyi Valentyn V., к.т.н.
Lysenko Oleh Н., Кандидат технічних наук
Registration Date
19-01-2024
Organization
V. Bakul Institute of superhard material of the National Academy of Sciences of Ukraine
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Plates made of IIb diamond single crystals were investigated by means of IR-spectroscopy. It was revealed that the content of boron impurity in the growth sectors increases in the sequence 001→113→111 and is 25, 40 and 60 ppm, respectively. It was determined using selective etching that the density of dislocations is the same sequence equal to 3.0×102, 1.9×103, and 2.5×104, respectively.
The best stability of I/V characteristics was found in diamond pyramids made from {111} growth sectors of IIb diamond single crystals, which were grown in the Fe-Al-C-B system. Such diamond indenters should be applied for tunneling microscopy.
For the first time, UV-induced current-voltage measurements were used to determine the transport properties of the main charge carriers in HPHT diamonds having electron conductivity. It was determined that the life time and mobility of the main carriers in the cubic growth sector {001} of these crystals are 3-4 and 1.2-1.5 times higher respectively, than in the octahedral sector {111}. Thus, cubic growth sectors of crystasl should be used for dielectric detectors of ionizing radiation, and octahedral sectors for semiconductor diamond probes in microscopy.
Product Description
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Grushko Volodymyr I.
Mickiewicz Eugene I.
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2024-01-19
