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Head: Bieliaiev Oleksandr Ye.. Investigation of electrical, optical, magnetic and acoustic properties of newest semiconductor materials and nanostructures, promising for use in nanoelectronics, nanophotonics and nanoacoustics. (popup.stage: Дослідження електричних, оптичних, магнітних та акустичних властивостей новітніх напівпровідникових матеріалів та наноструктур, перспективних для застосування в приладах наноелектроніки, нанофотоніки та наноакустики). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0226U000823

Head: Valakh Mykhailo Ya.. Development of the element base technology of modern infrared photoelectronics. (popup.stage: Розробка технології елементної бази сучасної інфрачервоної фото електроніки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U000735

Head: Bieliaiev Oleksandr Ye.. Investigation of electrical, optical, magnetic and acoustic properties of newest semiconductor materials and nanostructures, promising for use in nanoelectronics, nanophotonics and nanoacoustics. VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0120U102512

Head: Kochelap Viacheslav O.. Electron-phonon interaction in quantum hetero- and nanostructures based on wide-gap polar semiconductors. V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0120U102255

Head: Кочелап Вячеслав Олександрович. Development of multifunctional electronic nanosensors based on hybrid plasmon semiconductor structures for integrated multisensory systems. V. Lashkaryov Institute of semiconductor physics. № 0120U000209

Head: Kochelap Viacheslav O.. Development and investigation of hybrid semiconductor nanostructures with metasurfaces for optoelectronic applications. VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0120U000139

Head: Korotieiev Vadym Vyacheslavovych. Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources.. (popup.stage: ). Institute of Semiconductor Physics. № 0218U001770

Head: Кочелап Вячеслав Олександрович. Development of multifunctional electronic nanosensors based on hybrid plasmon semiconductor structures for integrated multisensory systems. V. Lashkaryov Institute of semiconductor physics. № 0118U002197

Head: Belyaev Alexander. "Experimental and theoretic studies of electrical and microwave properties of nanostructures and electronic devices based on the wide-gap semiconductor materials". (popup.stage: ). Institute of Semiconductor Physics. № 0218U001092

Head: Korotieiev Vadym Vyacheslavovych. Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources.. (popup.stage: ). Institute of Semiconductor Physics. № 0217U007015