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Head: Oleksii M. Nazarov. Development and research of functional nanomaterials and devices for THz and IR photoelectronics, micro- and nanoelectronics, biomedicine. (popup.stage: Розроблення та дослідження функціональних наноматеріалів і приладів для ТГц та ІЧ фотоелектроніки, мікро- і наноелектроніки, біомедицини.). V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine. № 0226U001269

Head: Bieliaiev Oleksandr Ye.. Semiconductor materials with nanostructured surfaces for new means of communication, infrared vision and information technologies. (popup.stage: Напівпровідникові матеріали з наноструктурованими поверхнями для нових засобів зв’язку, інфрачервоного бачення та інформаційних технологій). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0225U001247

Head: Melnyk Viktor P.. Creation of basic technologies for the formation of semiconductor materials and structures for Nano - and optoelectronics. (popup.stage: Створення базових технологій формування напівпровідникових матеріалів і структур для нано- та оптоелектроніки). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U002739

Head: Mamykin Sergij V.. Smoke sensor based on plasmon-polariton photodetector. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U105955

Head: Kladko Vasil Petrovich. Development of new methods for the formation of functional semiconductor materials and device structures. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U102896

Head: Danko Viktor A.. "New plasmonic nanomaterials based on laterally-ordered structures of noble metals for precise, rapid analysis of macromolecular compounds by spectroscopy of surface-enhanced Raman light scattering". Stage 2: Production of experimental samples of substrates with clarified characteristics of nanocavities and study of their morphological and optical characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U101544

Head: Indutnyi Ivan Z.. Development of processes for the formation of periodic ordered plasmon nanostructures by the method of interference photolithography based on chalcogenide semiconductors, the production of experimental samples and the study of their characteristics.. (popup.stage: ). V. Lashkaryov Institute of semiconductor physics. № 0221U100360