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Development of physical principles of technology of receipt of heterostructures on the basis of gallium-arsenide materials by the method of MOS hydride epitaxy for the receipt of high-efficiency photovoltaic elements
Head: Круковський Семен Іванович. Development of physical principles of technology of receipt of heterostructures on the basis of gallium-arsenide materials by the method of MOS hydride epitaxy for the receipt of high-efficiency photovoltaic elements. . № 0111U008113

Updated: 2026-10-29


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