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Information × Registration Number 0112U005082, ( 0217U003083  0217U003084  0217U003085  0217U003086  0217U003087  ) R & D request Title Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis. Head Гайдар Галина Петрівна, Registration Date 25-05-2012 Organization Institute for Nuclear Research of NAS of Ukraine popup.description1 popup.nrat_date 2024-12-10 Close
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Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis.
Head: Гайдар Галина Петрівна. Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis.. Institute for Nuclear Research of NAS of Ukraine. № 0112U005082
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Updated: 2026-03-26


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