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Information × Registration Number 0121U108465, R & D request Title Collective excitations and transport phenomena in semiconductor crystals and nanoscale structures with controlled distribution of deformation potentials during acousto- and ion-stimulated transformations Head Valakh Mykhaylo Ya., Доктор фізико-математичних наукKladko Vasyl P., Доктор фізико-математичних наук Registration Date 15-02-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description1 Comprehensive study of the effects arising from ion-beam and acoustic modification of the structure and electronic subsystem of metal oxides, in particular: gallium, zinc, vanadium, nickel and development of control methods as one of the real ways to create controlled nanotechnologies that will provide new functionality of instrument systems . Modification of epitaxial films of such oxides grown on different substrates (Si, Al2O3 and SiC) and structures InGaAs / GaAs, GaAlN / GaN, Ge / Si will allow controlled changes in the mobility of charge carriers and will allow their use for instrument-oriented structures. popup.nrat_date 2024-12-09 Close
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Collective excitations and transport phenomena in semiconductor crystals and nanoscale structures with controlled distribution of deformation potentials during acousto- and ion-stimulated transformations
Head: Valakh Mykhaylo Ya.. Collective excitations and transport phenomena in semiconductor crystals and nanoscale structures with controlled distribution of deformation potentials during acousto- and ion-stimulated transformations. VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0121U108465
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Updated: 2026-03-26


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