Registration Number
0121U108465,
R & D request
Title
Collective excitations and transport phenomena in semiconductor crystals and nanoscale structures with controlled distribution of deformation potentials during acousto- and ion-stimulated transformations
Head
Valakh Mykhaylo Ya., Доктор фізико-математичних наук
Kladko Vasyl P., Доктор фізико-математичних наук
Registration Date
15-02-2021
Organization
VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
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Comprehensive study of the effects arising from ion-beam and acoustic modification of the structure and electronic subsystem of metal oxides, in particular: gallium, zinc, vanadium, nickel and development of control methods as one of the real ways to create controlled nanotechnologies that will provide new functionality of instrument systems . Modification of epitaxial films of such oxides grown on different substrates (Si, Al2O3 and SiC) and structures InGaAs / GaAs, GaAlN / GaN, Ge / Si will allow controlled changes in the mobility of charge carriers and will allow their use for instrument-oriented structures.
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2024-12-10
