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Registration Number

0121U112031, ( 0222U001480  0223U003019  ) R & D request

Title

Radiation resistance investidation and tradiation defects effect on the irradiated with different types particles of InGaN semiconductor structures

Head

Malyi Yevhen V.,

Registration Date

07-07-2021

Organization

Institute of Nuclear Research of the National Academy of Sciences of Ukraine

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Intensive communication development and information networks of the information flows control and management has contributed to the search expansion for LEDs that are more reliable and efficient than traditional, grown on GaP, GaAs and their solid solutions that could meet consumer needs in the visible wavelength range. Heterostructures, due to their inherent barriers, at the contact boundaries and active layers make it possible to keep the media in the LED’s active zone; the quantum wells presence in them contributes to their local accumulation, and thus to the recombination avoidance through non-radiative centers. A solid solution InxGa1-xN using defining feature as the LED active region InGaN/GaN is the nitride solutions straightness, which does not impose restrictions on the composition and, accordingly, does not change the quantum yield in contrast to, for example, GaAs1-xPx diodes. The penetrate radiation use for the controlled introduction purpose of the structural defects into the studied objects can help to clarify their role in the devices characteristics degradation mechanism. The on-board optoelectronic modules radiation stability problems is still quite relevant, given the incomparably higher, compared to space, particle flux densities and modern accelerators and nuclear installations radiation field intensities, where it is possible to use optoelectronic communication lines or display, storage devices and data processing. It should also be noted that the radiation resistance study their active elements is one the ensuring components of the penetrate radiation above-mentioned high-power sources. operation reliability. The optical samples characteristics will be taken automatically by a measuring device consisting of the monochromator MDR-23 (resolution 1 nm), photoelectric multipliers such as FEU-100 and FEU-62, current stabilizer for LEDs, high-voltage power stabilizer and light source. C-V-characteristics will be removed by an automat

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2024-12-09