Registration Number
0126U003507,
R & D request
Title
Regularities of HPHT-crystallization and physical mechanisms governing the formation of electronic properties of diamond single crystals doped with boron and nitrogen at boundary concentrations
Head
Viktor V. Strelchuk, Доктор фізико-математичних наук
Registration Date
15-04-2026
Organization
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Development of a novel concept for tailoring the electrophysical properties of boron- and nitrogendoped semiconductor diamonds grown by solution–melt crystallization under high-pressure and high-temperature conditions. Investigation of the defect-impurity composition and its spatial distribution effects on the electrophysical characteristics of diamond electronic devices. Fabrication and study of arrays of single, highly coherent NV centers in IIa(Ib) diamond crystals,
promising for optoelectronic applications.
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2026-04-15
