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Information × Registration Number 0200U001276, 0195U024512 , R & D reports Title Complex investigations of interdefects interaction in Si, Ge, GaAs, CdHgTe, MnHgTe crystals on kinetics of electron processes of thermodynamic equilibrium and nonequilibrium conditions popup.stage_title Head Barans'kyj P.I., Registration Date 02-02-2000 Organization Institute of Semiconductor Physics popup.description2 In this account is an attempt to describe our results in the study of transport phenomena, structural perfections, photoconductivity and photoluminescence in technically important semiconductors, such as Si, Ge, GaAs, CdHgTe, MnHgTe at different external conditions ( at different values of T, H, E etc.) Product Description popup.authors popup.nrat_date 2020-04-03 Close
R & D report
Complex investigations of interdefects interaction in Si, Ge, GaAs, CdHgTe, MnHgTe crystals on kinetics of electron processes of thermodynamic equilibrium and nonequilibrium conditions
Head: Barans'kyj P.I.. Complex investigations of interdefects interaction in Si, Ge, GaAs, CdHgTe, MnHgTe crystals on kinetics of electron processes of thermodynamic equilibrium and nonequilibrium conditions. (popup.stage: ). Institute of Semiconductor Physics. № 0200U001276
1 documents found

Updated: 2026-03-23


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