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Information × Registration Number 0209U010808, 0107U001226 , R & D reports Title Technology of reception of the semiconductor materials for spin electronics popup.stage_title Head Slynko Evgen; Kovalyuk Zakhar, Registration Date 25-12-2009 Organization Chernivtsi Department of the Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine popup.description2 New semimagnetic semiconductors on the base of the compounds A4B6 and A3B6 are synthesized wich have magnetic order at room (and higher) temperatures: 280К in PbGeCrTe, 345К in PbCaCrTe and 350К in InSe<Mn>. The most effective mechanisms of increasing of exchange interaction between electrons in the compounds A4B6 (GeMnEuTe, GeMnYbTe, GeSnMnTe, SnMnErTe, PbMnVTe, PbGeCrTe, РbCаCrTе) and A3B6 (InSe < Mn >, InFeSe, InCoSe, In2Se3<Mn>) are determined. The theoretical models of the spin-dependent phenomena in semiconductors А4B6 are developed in view of a role of the doping impurities. The hybrid structures " ferromagnetic metal - layered semiconductor " (Ni/p-GaSe) and "metal - oxide - semiconductor" (AuNi/Ga2O3/p-GaSe) are synthesized and investigated, in which spin-dependent phenomena are realized at room temperature. Product Description popup.authors Іванов Володимир Ігорович Бахтінов Анатолій Петрович Водоп'янов Володимир Миколайович Дугаєв Віталій Костянтинович Заслонкін Андрій Володимирович Камінський Василь Михайлович Нетяга Віктор Васильович Слинько Василь Євгенович popup.nrat_date 2020-04-02 Close