Registration Number
0209U010808,
0107U001226
, R & D reports
Title
Technology of reception of the semiconductor materials for spin electronics
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Head
Slynko Evgen; Kovalyuk Zakhar,
Registration Date
25-12-2009
Organization
Chernivtsi Department of the Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine
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New semimagnetic semiconductors on the base of the compounds A4B6 and A3B6 are synthesized wich have magnetic order at room (and higher) temperatures: 280К in PbGeCrTe, 345К in PbCaCrTe and 350К in InSe<Mn>. The most effective mechanisms of increasing of exchange interaction between electrons in the compounds A4B6 (GeMnEuTe, GeMnYbTe, GeSnMnTe, SnMnErTe, PbMnVTe, PbGeCrTe, РbCаCrTе) and A3B6 (InSe < Mn >, InFeSe, InCoSe, In2Se3<Mn>) are determined. The theoretical models of the spin-dependent phenomena in semiconductors А4B6 are developed in view of a role of the doping impurities. The hybrid structures " ferromagnetic metal - layered semiconductor " (Ni/p-GaSe) and "metal - oxide - semiconductor" (AuNi/Ga2O3/p-GaSe) are synthesized and investigated, in which spin-dependent phenomena are realized at room temperature.
Product Description
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Іванов Володимир Ігорович
Бахтінов Анатолій Петрович
Водоп'янов Володимир Миколайович
Дугаєв Віталій Костянтинович
Заслонкін Андрій Володимирович
Камінський Василь Михайлович
Нетяга Віктор Васильович
Слинько Василь Євгенович
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2020-04-02
