Registration Number
0211U001068,
0106U000680
, R & D reports
Title
"Photoelectrical, luminescence, emission and surface properties of nanosized semiconductor structures"
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Head
Litovchenko Vladimyr Grygorovych,
Registration Date
14-01-2011
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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R&D Report: 229 p., 131 figures, 14 tables, 1 appendix, 270 literature sources. Objects of study are the nanosized semiconductor structures in dielectric ambients, structured surface layers, and based on them device structures. Purpose of the work is the obtaining principally new scientific data on the properties and parameters of nanocluster composites (both free standing and in different surroundings, including dielectric surroundings), the determination of the characteristics of surface effects and centres, their peculiarities with respect to bulk structures as well as the observation of new phenomena, non immanent to the bulk and the typical surface processes. Method of study comprises a number of techniques: IR absorption, photoluminescence, photovoltage, and electrical methods. Computer analysis of obtained data and comparison of obtained results with the results of earlier measurements. Stages of investigation: 1. Development of technological methods for the formation of nanosizes semiconductor structures. 2. Theory of the formation of Si nanocrystals. 3. Photoelectrical, luminescence, emission, and surface properties of nanosizes semiconductor structures. 4. Influence of ionizing radiation on the film and nanostructure properties. 5. Preparation of patents, presentations, and scientific papers based on the carried out investigations. Results: -original technologies for the formation of nanosized Si and CdTe clusters and thin films of semiconductors on the free surface and in the dielectric matrices of different types are developed -photoelectrical, luminescence, emission, and surface properties of nanosized semiconductor structures are studied in detail and the main regularities of processes are determined -model for the formation of Si nanocrystals is proposed and the theoretical calculations are carried out -cold emission from the nanostructured Si cathodes is studied -Si structures are studied to use them as photoelectrical converters of solar radiation as well as the criteria for obtaining limitedly high device parameters and their radiation hardness are formulated -enhancement of the gas sensitivity of MDS structures utilizing metal nanocomposite catalysts is found that enabled to create the enhanced gas sensitivity sensors. Foreseen assumption on the development of the objects of study: optimization of technologies for the formation of nanocluster systems with required parameters and small scattering on size for the use in the nanoelectronic devices. NANOCRYSTALS, SILICON, А2В6, LAYERED STRUCTURES, NANOSTRUCTURES, LUMINESCENCE, ELECTRON FIELD EMISSION, PHOTOCONVERTERS, GAS SENSORS.
Product Description
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Євтух Анатолій Антонович
Індутний Іван Захарович
Клюй Микола Іванович
Корбутяк Дмитро Васильович
Костильов Віталій Петрович
Лісовський Ігор Петрович
Литовченко Володимир Григорович
Романюк Борис Миколайович
Саченко Анатолій Васильович
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2020-04-02
