Registration Number
0211U007011,
0110U001120
, R & D reports
Title
Sensing devices based on radiation-hard semiconductor materials for mapping the magnetic fields of medical cyclotrons
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Head
Bolshakova Inessa, Доктор технічних наук
Registration Date
16-03-2011
Organization
Lviv Polytechnic National University
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Technology of high-precision installation of sensing elements inside probes and control over the parallelism between the sensing element's active area and the probes' lower surface has been developed. It includes the methods for providing strict parallelism between the plane of sensing element's assembly area and probes' lower surface, high-quality pasting of sensing elements and control over the parallelism of their installation. Within temperature range (77 - 550) K, electric physical parameters of InSb- and InAs-based microcrystalline and thin-film sensors have been studied and their temperature coefficients determined. Based on the conducted research into electric physical properties, optimum initial parameters of InSb and InAs microcrystalline and thin-film samples has been determined for their application as sensing elements for magnetic measuring probes. Researches into the effect exerted by neutron irradiation on microcrystalline and thin-film sensing elements of magnetic measuring probes by means of comparison between the results of parameter measurement before and after irradiation (off-line method) have been carried out. The effect of neutron flux spectrum on parameter change for InSb and InAs sensing elements has been studied. It has been determined that the ratio between fast and thermal neutron fluxes in reactor neutron spectrum significantly affects the extent and nature of InSb samples' sensitivity change, whereas virtually no effect of this factor on a change in InAs samples' sensitivity is observed. It has been determined that for complex heterostructures InAs/i-GaAs with In-containing buffer layers under the effect of neutron and electron irradiation, a change in parameters of not only active layer, but also intermediate metabuffer layers takes place. The studies have demonstrated that the use of such semiconductor multilayer heterostructures at radiation load considerably complicates predicting changes in their parameters under irradiation and is not effective for magnetic field sensors.
Product Description
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Єгоров А.Г.
Єрашок В.Е.
Большакова І.А.
Ворошило Г.І.
Гумен С.С.
Загачевський Ю.В.
Ковальова Н.В.
Когут І.В.
Козаченко Л.М.
Кость Я.Я.
Левченко А.О.
Макідо О.Ю.
Марусенков А.В.
Мороз А.П.
Палиняк І.В.
Тер-Арутюнян Ю.С.
Шуригін Ф.М.
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2020-04-02
