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Information × Registration Number 0212U002453, 0111U005878 , R & D reports Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt. popup.stage_title Head Krukovskii Semen Ivanovich, Registration Date 29-02-2012 Organization Public Joint-stock Company "Scientific and industrial concern "Nauka" popup.description2 Influence of pressure in reactor on formation AlhGaN1-h/InhGa1-hN/GaN/Al203 LED structures active areas has been researched. It has been determined that for investigated type of structure the optimum operating pressure is 200-300 mbar range. The obtained structures under such gas-dynamic conditions reach a maximum quantum efficiency of 8.7%. AlhGaN1-h/InhGa1-hN/GaN/Al203 LED structures with ultra-thin active InGaN layers limited variband short-range InGaN/GaN-superlattice have been grown and studied. That can significantly increase radiation quantum efficiency. Investigation of crystalline perfection and composition of AlhGaN1-h/InhGa1-hN/GaN/Al203 has been conducted by high resolution X-ray diffractometry. Investigation of current-voltage and capacitance-voltage characteristics of LED structures by adjusting the process has been conducted. That made possible to identify the relationship between structural and technological features and main parameters and characteristics of the LEDs. The processes on correction of main technological modes of crystallization AlhGaN1-h/InhGa1-hN/GaN/Al203 LED structures have been corrected on the base of conducted EL research LEDs. Product Description popup.authors Кость Я.Я. Круковський Р.С. Круковський С.І. Михащук Ю.С. Мрихін І.О. popup.nrat_date 2020-04-02 Close