Registration Number
0212U004466,
0111U001226
, R & D reports
Title
The development of scientifical basis and technological methods for creation of transducers on the basis of silicon micro and nanostructures for information systems
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Head
Druzhinin Anatoliy Olexandrovych,
Registration Date
14-02-2012
Organization
Lviv Polytechnic National University
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An analytical review of literature concerning the methodology for the growth of periodic ensembles of p-type Si and Si1-xGex nanowires and the studies of electrophysical and mechanical properties of nanotubes and nanowires (NW) has been carried out. The need for development of low power and cost input technology for obtaining of Si nanostructures persists. The set-up has been designed for the growing of silicon nanowires and the investigation of the growth peculiarities of their arrays by means of chemical vapor-phase epitaxy in the opened transport system for the application in nanoelectromechanical devices. The low temperature studies of strain influence on the electrical conductivity and magnetoresistance of Si whiskers with doping level in the vicinity to metal-insulator transition (MIT) confirmed the presence of hopping conductivity with E2 and E3 activation energies. The giant piezoresistance has been observed in compressed crystals at 4,2 K, which is attributed to the change of piezoresistance mechanism from the classic one to "non-classic" and explained by the conductivity via the localized states of charge carriers. An impedance method has been utilized for the investigation of electrophysical properties of polysilicon-on-insulator structures and the assessment of the grain size, the surface and grain boundaries contribution into their electrical conductivity has been performed.
Product Description
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Бережанський Є. І.
Гарасим І.Д.
Гвоздик Р.І.
Дружинін А. О.
Когут Ю. Р.
Корецький Р.М.
Кромпец Р.С.
Кутраков О.П.
Лях-Кагуй Н. С.
Нічкало С.І.
Островський І. П.
Стасюк Н. М.
Ховерко Ю. М.
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2020-04-02
