Registration Number
0212U005020,
0111U005420
, R & D reports
Title
Elaboration of effective probe methods of forming of nanoelectronic structures on the basis of the doped silicon
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Head
Hodаkovsky Nikolay,
Registration Date
20-02-2012
Organization
State scientific research centre "Fonon"
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The methods of increase thickness of obtained doped silicon have been developed and this process has been agreed with maximum possible voltage supplied to the probe for a particular scanning probe lithographer. The cantilevers different modes influence on local anodic oxidation processes has been researched. By using optimal modes of local anodic oxidation the possibility of obtaining of local oxide areas with linear dimensions of 3.0 nm has been proved. To achieve high efficiency of nanoscale structures formation the local anodic oxidation method has been tested as a powerful and multifunctional method for nanoscale devices formation using atomic force lithographer, such as storage devices with high density recording media. During research it were developed methods of local anodic oxidation resolution improving by studying the impact of different values of increased anode potential for atomic force lithograph probe on local anodic oxidation processes. The degree of correlation parameters for formed nanostructures with values of system total resistance has been defined and the level of optimization parameters of applied voltage pulse has been determined and necessary environment humidity has been provided. Using obtained local anodic oxidation optimal modes for doped silicon surface it have been obtained local oxide areas with boundary values of linear dimensions.
Product Description
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Артеменко Л.А.
Будник В.М.
Возненко Л.О.
Воронько А.О.
Голуб В.В.
Корж В.І.
Кубрак К.В.
Ларкіна А.С.
Малкуш І.Ф.
Матвієнко О.В.
Ходаковський М.І.
Черепаха В.В.
Шевчук Б.М.
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2020-04-02
