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Information × Registration Number 0212U006423, 0109U000943 , R & D reports Title The investigations of the radiation effects into the semiconductors injection structures with p-n-, p-i-n- and heterojunctions popup.stage_title Head Kurmashev Sh. D., Registration Date 28-03-2012 Organization Odesa I.I.Mechnikov national university.Pervomaisk institute. popup.description2 Experimentally and theoretically physical machineries of influencing a radiation irradiation on the structure of the regions of volume charge, responsible for forming physical and functional parameters of foto- and magnitochuvstvitelnih devices of micro- and nanoelectronic with the injectia of not ravnovesnih transmitters of charge in the volume of semiconductor are grounded. Conception of the injectia-plasma strengthening in the compensated semiconductors in the conditions of radiation irradiation is developed. Methods of rise of radiation firmness of primary transformers on the base of injectia structures are grounded. Product Description popup.authors Канищева Н.О. Куталова Н.О. Миронченко Т.І. Садова Н.М. popup.nrat_date 2020-04-02 Close