Registration Number
0212U006423,
0109U000943
, R & D reports
Title
The investigations of the radiation effects into the semiconductors injection structures with p-n-, p-i-n- and heterojunctions
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Head
Kurmashev Sh. D.,
Registration Date
28-03-2012
Organization
Odesa I.I.Mechnikov national university.Pervomaisk institute.
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Experimentally and theoretically physical machineries of influencing a radiation irradiation on the structure of the regions of volume charge, responsible for forming physical and functional parameters of foto- and magnitochuvstvitelnih devices of micro- and nanoelectronic with the injectia of not ravnovesnih transmitters of charge in the volume of semiconductor are grounded. Conception of the injectia-plasma strengthening in the compensated semiconductors in the conditions of radiation irradiation is developed. Methods of rise of radiation firmness of primary transformers on the base of injectia structures are grounded.
Product Description
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Канищева Н.О.
Куталова Н.О.
Миронченко Т.І.
Садова Н.М.
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2020-04-02
