Registration Number
0212U008601,
0112U004345
, R & D reports
Title
Investigation of photoelectric processes, optimization of the structure and parameters of CdTe-based thin-film solar cells to improve the efficiency of converting solar energy into electricity
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Head
Kosyachenko Leonid A,
Registration Date
09-01-2013
Organization
Yuri Fedkovych Chernivtsi National University
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The optical and electrical properties of the CdS and ZnxCd1-xS layers for their use as a "window" in solar cells based on CdTe are investigated. It is shown that the replacement of CdS with the ZnxCd1-xS alloy in the CdS/CdTe solar cells increases the short circuit current density by 8-17% for x = 0.65-0.85. It is substantiated that the electrical conductivity of CdS and ZnxCd1-xS layers is determined by the strongly compensated deep donor impurity. The losses due to recombination on the surfaces of the CdTe layer and in the space charge region (SCR) of the CdS (ZnCdS)/CdTe heterostructure are also investigated. It is proved that the dependence of short circuit current density on the width of the SCR W describes by the curve with a maximum at W = 0.4-0.8 microns. If W < 0.3-0.4 microns, reducing short circuit current density caused by recombination of photogenerated carriers in the SCR does not exceed 0.4%, but when W > 0.3-0.4 microns recombination losses in the SCR exceeds 10-20%. If the thickness of the CdTe is less than 5 microns, the losses due to processes outside the SCR and recombination on its rear surface are enhanced. Thinning the CdTe layer to d = 1 micron reduces short circuit current density on ~ 5%, and at d = 0.5 microns decrease of short circuit current density significantly exceeds ~ 10%. The results reveal the ways of improving the efficiency solar cells studied in the project.
Product Description
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Грушко Євгеній Валентинович
Косяченко Леонід Андрійович
Маслянчук Олена Леонідівна
Склярчук Валерій Михайлович
Склярчук Олена Федорівна
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2020-04-02
