Search academic texts

Information × Registration Number 0213U000062, 0112U006484 , R & D reports Title Development of industrial technology for tandem heterostructures production for PV by the method of gas phases epitaxy from organometallic connection and implementation it to production (the second stage) popup.stage_title Head Krukovskiy Semen, Registration Date 15-01-2013 Organization Public Joint Stock Company "Scientific and Industrial Concern "Nauka" in the person of Lviv branch of Public Joint Stock Company "Scientific and Industrial Concern "Nauka" popup.description2 Diffusion processes of formation lower germanium- based p - n junction have been optimized. Germanium photocells with external quantum yield of 80-90% and 800-1600 nm wavelength range and internal quantum yield near 100% have been obtained. The process conditions for formation GaAs- based nucleate layer have been tried out. The process conditions for wide window n-AlInP growth have been corrected. The thicknesses and concentration of base carriers in epitaxial layers and AlxGa1-xAs solid solutions have been optimized. Technique of fabrication high structural perfection tandem heterostructure Ge / GaAs / InGaP have been designed and corrected. The high quality 3-stage tandem heterostructures Ge / GaAs / InGaP have been fabricated. The critical parameters (thickness, concentration, solid solution composition) of 3-stage heterostructures Ge / GaAs / InGaP have been studied. The infrastructure of the process site on photovoltaic tandem heterostructures fabrication by gas-phase epitaxy from organometallic compounds on MOS hydride epitaxy System Discovery - 180LDM has been organized. Product Description popup.authors Васильев Л.А. Горин А.В. Горин С.В. Горина В.П. Коваленко В.М. Круковська Н.Й. Круковський Р.С. Ларкіна Н.В. Луговський В.В. Ляхова Н.М. popup.nrat_date 2020-04-02 Close