Registration Number
0213U000062,
0112U006484
, R & D reports
Title
Development of industrial technology for tandem heterostructures production for PV by the method of gas phases epitaxy from organometallic connection and implementation it to production (the second stage)
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Head
Krukovskiy Semen,
Registration Date
15-01-2013
Organization
Public Joint Stock Company "Scientific and Industrial Concern "Nauka" in the person of Lviv branch of Public Joint Stock Company "Scientific and Industrial Concern "Nauka"
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Diffusion processes of formation lower germanium- based p - n junction have been optimized. Germanium photocells with external quantum yield of 80-90% and 800-1600 nm wavelength range and internal quantum yield near 100% have been obtained. The process conditions for formation GaAs- based nucleate layer have been tried out. The process conditions for wide window n-AlInP growth have been corrected. The thicknesses and concentration of base carriers in epitaxial layers and AlxGa1-xAs solid solutions have been optimized. Technique of fabrication high structural perfection tandem heterostructure Ge / GaAs / InGaP have been designed and corrected. The high quality 3-stage tandem heterostructures Ge / GaAs / InGaP have been fabricated. The critical parameters (thickness, concentration, solid solution composition) of 3-stage heterostructures Ge / GaAs / InGaP have been studied. The infrastructure of the process site on photovoltaic tandem heterostructures fabrication by gas-phase epitaxy from organometallic compounds on MOS hydride epitaxy System Discovery - 180LDM has been organized.
Product Description
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Васильев Л.А.
Горин А.В.
Горин С.В.
Горина В.П.
Коваленко В.М.
Круковська Н.Й.
Круковський Р.С.
Ларкіна Н.В.
Луговський В.В.
Ляхова Н.М.
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2020-04-02
