Registration Number
0213U001705,
0111U007115
, R & D reports
Title
Investigation of electronic, mixed plasmon-phonon modes and structural peculiarities in nitride nanostructures in nonequilibrium conditions
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Head
Naumov A.V.,
Registration Date
24-01-2013
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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Object of studies: nitride nanosize heterostructures based on GaN/AlN. The aim of work: investigation of physical mechanisms of electron transport in nitride heterostructures. Nanosize GaN/AlN heterostructures grown on different substrates (Al2O3, Si, GaAs) were investigated using Raman spectroscopy, high-resolution X-ray diffraction diagnostics and electrophysical characterization. The local spatial distribution of structural, optical and electron properties of GaN diode structures grown on (0001) sapphire substrate was investigated. Main regularities of deformations distribution, structural perfection and concentration of free charge carriers along growth direction of GaN diode structures were studied for the first time. The high-resolution X-ray diffraction diagnostics and electric measurements as well as computer modeling of energy band structure, potential profile, local density of states and quantum transport were used for comparative study of double barrier resonant-tunneling diodes AlN/GaN/AlN.
Product Description
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Авраменко К.А.
Коломис О.Ф.
Сафрюк Н.В.
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2020-04-02
