Registration Number
0213U002799,
0112U001212
, R & D reports
Title
Technology for radiation modification of AIIIBV semiconductor materials for sensor electronics
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Head
Bolshakova Inessa, Доктор технічних наук
Registration Date
07-02-2013
Organization
Lviv Polytechnic National University
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The conducted review of literature data and analysis of existing methods for modification of semiconductor materials has shown that the use of radiation techniques allows to obtain semiconductor materials and finished semiconductor devices with characteristics necessary for solving the tasks of modern semiconductor electronics. The determined physical basis for forecasting the properties of irradiated semiconductor materials has shown the possibility of practical implementation of the technology for parameter change of In-containing semiconductor materials by introducing controlled radiation defects followed by their annealing. Gear and instrumentation for conducting in-situ measurement of materials' and sensors' parameters during their irradiation have been developed and produced and a new version of software for measuring system has been developed. The use of the given instrumentation will allow to ensure high precision of radiation-modified materials' parameter control, as well as control and regulation of temperature of sensors under study in the process of their irradiation.
Product Description
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Большакова І.А.
Гумен С.С.
Загачевський Ю.В.
Ковальова Н.В.
Когут І.В.
Козаченко Л.М.
Кость Я.Я.
Левченко А.О.
Макідо О.Ю.
Мороз А.П.
Палиняк І.В.
Сушко І.Р.
Шуригін Ф.М.
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2020-04-02
