Registration Number
0213U004498,
0113U003227
, R & D reports
Title
Developent of the technology for deposition of nanocrystalline silicon carbide films for the production of high-stability temperature sensors on their base
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Head
Lopin Aleksandr Vladimirovich,
Registration Date
23-12-2013
Organization
Institute for Single Crystals National Academy of Sciences of Ukraine
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Optimized are the conditions of the formation of nanocrystalline SiC films by direct ion deposition at different temperatures of SiX, Al2O3 and SiO2 substrates ranging between 910 and 1210 degrees Celsius. Chips of the temperature sensors (thermoresistors) are obtained on the base of thermally sensitive nanostructured layers of high-resistance SiC with a thickness of 1.5 mcm grown on sapphire substrate. The thermometric characteristics of the chips of the temperature sensors are investigated at the temperature interval from -195 to +500 degrees Celsius.
Product Description
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Козловський Анатолій Антонович
Семенов Олександр Володимирович
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2020-04-02
