Registration Number
0213U004608,
0113U002132
, R & D reports
Title
"Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 4 stage - "Development and investigation of liquid immersion photolithography on the basis of chalcogenide photoresists."
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Head
Indutnyi Ivan, Доктор фізико-математичних наук
Registration Date
18-12-2013
Organization
V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine
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Designed and manufactured and assembled of the optical scheme for the implementation of the liquid immersion interference photolithography based on the chalcogenide photoresist. The optimization of technological processes of the chalcogenide photoresist deposition (including germanium based compounds), and the conditions of their exposure and selective etching have been made. Based on the optimized technical process experimental samples of high frequency (up to 6000 mm-1) relief-phase structures have been manufactured and their characteristics were investigated. A lithographic process in chalcogenide layers annealed at a temperature close to the softening temperature of the corresponding chalcogenide glass composition have been developed by sequential exposure and positive selective etching of the layers. The technology allows you to create periodic structures on the surface as a semiconductor and dielectric plates as well as on the functional layers ( including metal ) previously deposited on the substrate . These one-dimensional and two-dimensional periodic submicron structures are used in sensors based on plasmon resonance, photodetectors with high efficiency, solar cells , polarizers, as photonic crystals, MEMS structures, templates for growing 3D- structures, nanowires , etc. .
Product Description
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Данько Віктор Андрійович
Жовмір Сергій Сергійович
Луканюк Марія Василівна
Минько Віктор Іванович
Михайловська Катерина Василівна
Сопінський Микола Вікторович
Шепелявий Петро Євгенович
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2020-04-02
